| PART |
Description |
Maker |
| AK4640 |
16BIT CODEC WITH MIC /HP/SPK-AMPl
|
Asahi Kasei Microsystems Co.,Ltd
|
| AK4640 AK4640VG AK4640VN |
16BIT CODEC WITH MIC /HP/SPK-AMPl
|
AKM[Asahi Kasei Microsystems]
|
| LA4581 LA4581MB |
Oscillator; Frequency:75MHz; Frequency Tolerance: /-50ppm; Load Capacitance:15pF; Supply Voltage:3.3V; Crystal Terminals:Surface Mount (SMD, SMT)
Preamplifier Power Amplifier for 3V Headphone Stereos
Preamplifier Power Amplifier for 3V Headphone Stereos
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SA886 2SA0886 |
Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
| KSB1116S KSB1116SYBU KSB1116SYTA KSB1116SYTANL |
PNP Epitaxial Silicon Transistor
Audio Frequency Power Amplifier Medium Speed Switching
From old datasheet system
Audio Frequency Power Amplifier Medium Speed Switching
|
FAIRCHILD[Fairchild Semiconductor]
|
| ADF4212L ADF4212LBCP |
ADF4212L Dual Power PLL Frequency Synthesizer
ADF4212L: Dual Low Power PLL Frequency Synthesizer Data Sheet (Rev. A. 3/03)
|
Analog Devices
|
| STK4160MK5 STK4190K5 STK4190MK5 STK4120MK5 STK4110 |
30W x 2-channel power amplifier
2ch./1packge - Power Supply 6W/ch. ~ 100W/ch. THD=0.08%
2ch./1packge, - Power Supply 6W/ch. ~ 100W/ch. THD=0.08%
PIEZO-BUZZER 4.096KHZ 15MM-DIA 9.5NF-30% W/CASING BULK
STK Audio Power Amplifier 沙头角音频功率放大器
TRANSDUCER AUDIO ; Capacitance:14nF; Connector type:2 pin; Diameter, external:28mm; Diameter, panel cut-out:19.05mm; Diameter, pin:0.95mm; Distance, sound level:30cm; Frequency:3500Hz; Frequency, capacitance measurement:1kHz;
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| BU2614 BU2614FS A5801021 BU2614FSNBSP BU2614NBSP B |
Audio LSIs > High frequency signal processing > PLL frequency synthesizer
AM/FM Receiver Circuit
From old datasheet system
PLL frequency synthesizer for tuners
|
Rohm Co Ltd
ROHM[Rohm]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220 |
CHOKE, POWER, SHIELDED, 10UH; Inductor type:Shielded Power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; Frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; Frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 150UH; Inductor type:Shielded Power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; Frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; Frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 220UH; Inductor type:Shielded Power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; Frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 33UH; Inductor type:Shielded Power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; Frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 68UH; Inductor type:Shielded Power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; Frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
|
BOURNS INC
|
| KSC945Y KSC945CG KSC945CL KSC945CO KSC945CR KSC945 |
NPN Epitaxial Silicon Transistor
Audio Frequency Amplifier & High Frequency OSC.
Audio Frequency Amplifier & High Frequency OSC.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| 2SB544 2SD400 2SD400E 2SD400D 2SD400F 2SB544G 2SB5 |
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-92VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-92VAR
Low-Frequency Power Amp, Electronic Governor Applications
Low-Frequency Power Amp Electronic Governor Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
|
